Weyandt Hall, Room 56D
Indiana University of Pennsylvania
Indiana, Pennsylvania. 15705
Devki Talwar conducts research on defects in semiconductor materials used for various electronics and opto-electronics.
He has been with IUP for almost 20 years, and is the author of more than 100 refereed journal articles, two book chapters, and review articles. His expertise in the sophisticated Green’s function technique is considered very useful for providing information on the electronic and vibrational properties of defects in semiconductors, quantum wells, and superlattices. Talwar is recognized by the international community as a prolific researcher.
Devki N. Talwa, Hao-Hsiung Linc, Zhe Chuan Feng (2020) Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers, Materials Science & Engineering B
Talwar, D. N., Lin, H. H., & Feng, Z. C. (2019). Phonon characteristics of Si‐doped InAs grown by gas‐source molecular beam epitaxy. Journal of Raman Spectroscopy, 50(11), 1731–1743. doi: 10.1002/jrs.5703
Structural and dynamical properties of Bridgman-grown CdSexTe1−x (0<x≤0.35) ternary alloy
Atypical phonon modes in zinc-blende BN/GaN
superlattices” in Applied Physics Letters 102, 252101 (2013)